Structural and transport properties of GaAs/δ -Mn/GaAs/In;, Ga1 -x As/GaAs quantum wells
Identifieur interne : 000186 ( Russie/Analysis ); précédent : 000185; suivant : 000187Structural and transport properties of GaAs/δ -Mn/GaAs/In;, Ga1 -x As/GaAs quantum wells
Auteurs : RBID : Pascal:08-0226791Descripteurs français
- Pascal (Inist)
- Phénomène transport, Mobilité trou, Diffraction RX, Profil profondeur, Photoluminescence, Effet température, Effet Hall anormal, Impureté magnétique, Spectre réflexion, Conductivité électrique, Gallium Indium Arséniure Mixte, Incidence rasante, Arséniure de gallium, Puits quantique, Manganèse, Métal transition, GaAs.
- Wicri :
- concept : Manganèse.
English descriptors
- KwdEn :
- Anomalous Hall effect, Depth profiles, Electrical conductivity, Gallium Indium Arsenides Mixed, Gallium arsenides, Grazing incidence, Hole mobility, Magnetic impurities, Manganese, Photoluminescence, Quantum wells, Reflection spectrum, Temperature effects, Transition elements, Transport processes, XRD.
Abstract
We report results of investigations of the structural and transport properties of GaAs/Ga1-xlnxAs/GaAs quantum wells (QWs) having a 0.5-1.8 monolayer (ML) thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of about 2000 cm2 (V s)-1, being by several orders of magnitude higher than in known ferromagnetic two-dimensional (2D) structures. The analysis of the electro-physical properties of these systems is based on detailed study of their structure by means of high-resolution x-ray diffractometry and glancing-incidence reflection, which allow us to restore the depth profiles of the structural characteristics of the QWs and thin Mn-containing layers. These investigations show the absence of Mn atoms inside the QW. The quality of the structures was also characterized by photoluminescence spectra from the QWs. The transport properties reveal features inherent to ferromagnetic systems: a specific maximum in the temperature dependence of the resistance and the anomalous Hall effect (AHE) observed in samples with both 'metallic' and activated types of conductivity up to ∼ 100 K. AHE is most pronounced in the temperature range where the resistance maximum is observed. The results are discussed in terms of the interaction of 2D-holes and magnetic Mn ions in the presence of large-scale potential fluctuations related to the random distribution of Mn atoms. The AHE values are compared with calculations taking into account the 'intrinsic' mechanism in ferromagnetic systems.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Structural and transport properties of GaAs/δ -Mn/GaAs/In;, Ga<sub>1</sub> -x As/GaAs quantum wells</title><author><name sortKey="Aronzon, B A" uniqKey="Aronzon B">B. A. Aronzon</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Russian Research Center 'Kurchatov Institute', Kurchatov Square 1</s1><s2>123182 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>P N Lebedev Research Center in Physics, Leninskii Avenue 53</s1><s2>119991 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Kovalchuk, M V" uniqKey="Kovalchuk M">M. V. Kovalchuk</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Russian Research Center 'Kurchatov Institute', Kurchatov Square 1</s1><s2>123182 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Pashaev, E M" uniqKey="Pashaev E">E. M. Pashaev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Russian Research Center 'Kurchatov Institute', Kurchatov Square 1</s1><s2>123182 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Chuev, M A" uniqKey="Chuev M">M. A. Chuev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Russian Research Center 'Kurchatov Institute', Kurchatov Square 1</s1><s2>123182 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Physics and Technology of RAS, Nakhimovskii Avenue 34</s1><s2>117218 Moscow</s2><s3>RUS</s3><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Kvardakov, V V" uniqKey="Kvardakov V">V. V. Kvardakov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Russian Research Center 'Kurchatov Institute', Kurchatov Square 1</s1><s2>123182 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Subbotin, I A" uniqKey="Subbotin I">I. A. Subbotin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Russian Research Center 'Kurchatov Institute', Kurchatov Square 1</s1><s2>123182 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>A V Shubnikov Institute of Crystallography of RAS, Leninskii Avenue 59</s1><s2>119333 Moscow</s2><s3>RUS</s3><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Rylkov, V V" uniqKey="Rylkov V">V. V. Rylkov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Russian Research Center 'Kurchatov Institute', Kurchatov Square 1</s1><s2>123182 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Pankov, M A" uniqKey="Pankov M">M. A. Pankov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Russian Research Center 'Kurchatov Institute', Kurchatov Square 1</s1><s2>123182 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>P N Lebedev Research Center in Physics, Leninskii Avenue 53</s1><s2>119991 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Likhachev, I A" uniqKey="Likhachev I">I A Likhachev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Russian Research Center 'Kurchatov Institute', Kurchatov Square 1</s1><s2>123182 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Zvonkov, B N" uniqKey="Zvonkov B">B. N. Zvonkov</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Physico-Technical Research Institute of Nizhny Novgorod University</s1><s2>603950, N Novgorod</s2><s3>RUS</s3><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Physico-Technical Research Institute of Nizhny Novgorod University</wicri:noRegion></affiliation></author><author><name sortKey="Danilov, Yu A" uniqKey="Danilov Y">Yu. A. Danilov</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Physico-Technical Research Institute of Nizhny Novgorod University</s1><s2>603950, N Novgorod</s2><s3>RUS</s3><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Physico-Technical Research Institute of Nizhny Novgorod University</wicri:noRegion></affiliation></author><author><name sortKey="Vihrova, O V" uniqKey="Vihrova O">O. V. Vihrova</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Physico-Technical Research Institute of Nizhny Novgorod University</s1><s2>603950, N Novgorod</s2><s3>RUS</s3><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Physico-Technical Research Institute of Nizhny Novgorod University</wicri:noRegion></affiliation></author><author><name sortKey="Lashkul, A V" uniqKey="Lashkul A">A. V. Lashkul</name><affiliation wicri:level="1"><inist:fA14 i1="06"><s1>Wihuri Physical Laboratory, Department of Physics, University of Turku</s1><s2>20014 Turku</s2><s3>FIN</s3><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>20014 Turku</wicri:noRegion></affiliation></author><author><name sortKey="Laiho, R" uniqKey="Laiho R">R. Laiho</name><affiliation wicri:level="1"><inist:fA14 i1="06"><s1>Wihuri Physical Laboratory, Department of Physics, University of Turku</s1><s2>20014 Turku</s2><s3>FIN</s3><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>20014 Turku</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">08-0226791</idno><date when="2008">2008</date><idno type="stanalyst">PASCAL 08-0226791 INIST</idno><idno type="RBID">Pascal:08-0226791</idno><idno type="wicri:Area/Main/Corpus">006B98</idno><idno type="wicri:Area/Main/Repository">005D56</idno><idno type="wicri:Area/Russie/Extraction">000186</idno></publicationStmt><seriesStmt><idno type="ISSN">0953-8984</idno><title level="j" type="abbreviated">J. phys., Condens. matter : (Print)</title><title level="j" type="main">Journal of physics. Condensed matter : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Anomalous Hall effect</term><term>Depth profiles</term><term>Electrical conductivity</term><term>Gallium Indium Arsenides Mixed</term><term>Gallium arsenides</term><term>Grazing incidence</term><term>Hole mobility</term><term>Magnetic impurities</term><term>Manganese</term><term>Photoluminescence</term><term>Quantum wells</term><term>Reflection spectrum</term><term>Temperature effects</term><term>Transition elements</term><term>Transport processes</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Phénomène transport</term><term>Mobilité trou</term><term>Diffraction RX</term><term>Profil profondeur</term><term>Photoluminescence</term><term>Effet température</term><term>Effet Hall anormal</term><term>Impureté magnétique</term><term>Spectre réflexion</term><term>Conductivité électrique</term><term>Gallium Indium Arséniure Mixte</term><term>Incidence rasante</term><term>Arséniure de gallium</term><term>Puits quantique</term><term>Manganèse</term><term>Métal transition</term><term>GaAs</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Manganèse</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report results of investigations of the structural and transport properties of GaAs/Ga<sub>1-x</sub>ln<sub>x</sub>As/GaAs quantum wells (QWs) having a 0.5-1.8 monolayer (ML) thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of about 2000 cm<sup>2</sup> (V s)<sup>-1</sup>, being by several orders of magnitude higher than in known ferromagnetic two-dimensional (2D) structures. The analysis of the electro-physical properties of these systems is based on detailed study of their structure by means of high-resolution x-ray diffractometry and glancing-incidence reflection, which allow us to restore the depth profiles of the structural characteristics of the QWs and thin Mn-containing layers. These investigations show the absence of Mn atoms inside the QW. The quality of the structures was also characterized by photoluminescence spectra from the QWs. The transport properties reveal features inherent to ferromagnetic systems: a specific maximum in the temperature dependence of the resistance and the anomalous Hall effect (AHE) observed in samples with both 'metallic' and activated types of conductivity up to ∼ 100 K. AHE is most pronounced in the temperature range where the resistance maximum is observed. The results are discussed in terms of the interaction of 2D-holes and magnetic Mn ions in the presence of large-scale potential fluctuations related to the random distribution of Mn atoms. The AHE values are compared with calculations taking into account the 'intrinsic' mechanism in ferromagnetic systems.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0953-8984</s0></fA01><fA02 i1="01"><s0>JCOMEL</s0></fA02><fA03 i2="1"><s0>J. phys., Condens. matter : (Print)</s0></fA03><fA05><s2>20</s2></fA05><fA06><s2>14</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Structural and transport properties of GaAs/δ -Mn/GaAs/In;, Ga<sub>1</sub> -x As/GaAs quantum wells</s1></fA08><fA11 i1="01" i2="1"><s1>ARONZON (B. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>KOVALCHUK (M. V.)</s1></fA11><fA11 i1="03" i2="1"><s1>PASHAEV (E. M.)</s1></fA11><fA11 i1="04" i2="1"><s1>CHUEV (M. A.)</s1></fA11><fA11 i1="05" i2="1"><s1>KVARDAKOV (V. V.)</s1></fA11><fA11 i1="06" i2="1"><s1>SUBBOTIN (I. A.)</s1></fA11><fA11 i1="07" i2="1"><s1>RYLKOV (V. V.)</s1></fA11><fA11 i1="08" i2="1"><s1>PANKOV (M. A.)</s1></fA11><fA11 i1="09" i2="1"><s1>LIKHACHEV (I A)</s1></fA11><fA11 i1="10" i2="1"><s1>ZVONKOV (B. N.)</s1></fA11><fA11 i1="11" i2="1"><s1>DANILOV (Yu. A.)</s1></fA11><fA11 i1="12" i2="1"><s1>VIHROVA (O. V.)</s1></fA11><fA11 i1="13" i2="1"><s1>LASHKUL (A. V.)</s1></fA11><fA11 i1="14" i2="1"><s1>LAIHO (R.)</s1></fA11><fA14 i1="01"><s1>Russian Research Center 'Kurchatov Institute', Kurchatov Square 1</s1><s2>123182 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>P N Lebedev Research Center in Physics, Leninskii Avenue 53</s1><s2>119991 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="03"><s1>Institute of Physics and Technology of RAS, Nakhimovskii Avenue 34</s1><s2>117218 Moscow</s2><s3>RUS</s3><sZ>4 aut.</sZ></fA14><fA14 i1="04"><s1>A V Shubnikov Institute of Crystallography of RAS, Leninskii Avenue 59</s1><s2>119333 Moscow</s2><s3>RUS</s3><sZ>6 aut.</sZ></fA14><fA14 i1="05"><s1>Physico-Technical Research Institute of Nizhny Novgorod University</s1><s2>603950, N Novgorod</s2><s3>RUS</s3><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ></fA14><fA14 i1="06"><s1>Wihuri Physical Laboratory, Department of Physics, University of Turku</s1><s2>20014 Turku</s2><s3>FIN</s3><sZ>13 aut.</sZ><sZ>14 aut.</sZ></fA14><fA20><s2>145207.1-145207.9</s2></fA20><fA21><s1>2008</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>577E2</s2><s5>354000183792800090</s5></fA43><fA44><s0>0000</s0><s1>© 2008 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>34 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>08-0226791</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of physics. Condensed matter : (Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>We report results of investigations of the structural and transport properties of GaAs/Ga<sub>1-x</sub>ln<sub>x</sub>As/GaAs quantum wells (QWs) having a 0.5-1.8 monolayer (ML) thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of about 2000 cm<sup>2</sup> (V s)<sup>-1</sup>, being by several orders of magnitude higher than in known ferromagnetic two-dimensional (2D) structures. The analysis of the electro-physical properties of these systems is based on detailed study of their structure by means of high-resolution x-ray diffractometry and glancing-incidence reflection, which allow us to restore the depth profiles of the structural characteristics of the QWs and thin Mn-containing layers. These investigations show the absence of Mn atoms inside the QW. The quality of the structures was also characterized by photoluminescence spectra from the QWs. The transport properties reveal features inherent to ferromagnetic systems: a specific maximum in the temperature dependence of the resistance and the anomalous Hall effect (AHE) observed in samples with both 'metallic' and activated types of conductivity up to ∼ 100 K. AHE is most pronounced in the temperature range where the resistance maximum is observed. The results are discussed in terms of the interaction of 2D-holes and magnetic Mn ions in the presence of large-scale potential fluctuations related to the random distribution of Mn atoms. The AHE values are compared with calculations taking into account the 'intrinsic' mechanism in ferromagnetic systems.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C21F</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H67D</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Phénomène transport</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Transport processes</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Mobilité trou</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Hole mobility</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>XRD</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Profil profondeur</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Depth profiles</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Effet température</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Temperature effects</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Effet Hall anormal</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Anomalous Hall effect</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Impureté magnétique</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Magnetic impurities</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Spectre réflexion</s0><s5>10</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Reflection spectrum</s0><s5>10</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Espectro reflexión</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>11</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Gallium Indium Arséniure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>12</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Gallium Indium Arsenides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>12</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>12</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Incidence rasante</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Grazing incidence</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Incidencia rasante</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Arséniure de gallium</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Puits quantique</s0><s5>16</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Quantum wells</s0><s5>16</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Manganèse</s0><s2>NC</s2><s5>17</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Manganese</s0><s2>NC</s2><s5>17</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Métal transition</s0><s5>48</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Transition elements</s0><s5>48</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>GaAs</s0><s4>INC</s4><s5>52</s5></fC03><fN21><s1>147</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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